STF16N50M2 Series

N-channel 500 V, 0.24 Ohm typ., 13 A MDmesh M2 Power MOSFET in a TO-220FP package

Catalog

N-channel 500 V, 0.24 Ohm typ., 13 A MDmesh M2 Power MOSFET in a TO-220FP package

Part	Package / Case	Technology	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	FET Type	Drain to Source Voltage (Vdss)	Operating Temperature	Vgs(th) (Max) @ Id	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds
STMicroelectronics STF16NM50N	TO-220-3 Full Pack	MOSFET (Metal Oxide)	Through Hole	1200 pF	38 nC	25 V	N-Channel	500 V	150 °C	4 V	TO-220FP	15 A	10 V	260 mOhm
STMicroelectronics STF16N65M2	TO-220-3 Full Pack	MOSFET (Metal Oxide)	Through Hole			25 V	N-Channel	650 V		4 V	TO-220FP	11 A	10 V	360 mOhm	25 W	-55 °C	150 °C	19.5 nC
STMicroelectronics STF16N65M5	TO-220-3 Full Pack	MOSFET (Metal Oxide)	Through Hole		45 nC	25 V	N-Channel	650 V	150 °C	5 V	TO-220FP	12 A	10 V	299 mOhm	25 W				1250 pF
STMicroelectronics STF16N50M2	TO-220-3 Full Pack	MOSFET (Metal Oxide)	Through Hole			25 V	N-Channel	500 V		4 V	TO-220 Full Pack	13 A	10 V	280 mOhm	25 W	-55 °C	150 °C	19.5 nC	710 pF
STMicroelectronics STF16NK60Z	TO-220-3 Full Pack	MOSFET (Metal Oxide)	Through Hole		86 nC	30 V	N-Channel	600 V	150 °C	4.5 V	TO-220FP	14 A	10 V	420 mOhm	40 W				2650 pF

Catalog

N-channel 500 V, 0.24 Ohm typ., 13 A MDmesh M2 Power MOSFET in a TO-220FP package

Description

These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.