TJ90S04M3L,LXHQ

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Toshiba Semiconductor and Storage

MOSFET P-CH 40V 90A DPAK

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Toshiba Semiconductor and Storage

MOSFET P-CH 40V 90A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	TJ90S04M3L,LXHQ

Current - Continuous Drain (Id) @ 25°C	90 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	172 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	7700 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	180 W
Rds On (Max) @ Id, Vgs	4.3 mOhm
Supplier Device Package	DPAK+
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	10 V
Vgs (Max) [Min]	-20 V
Vgs(th) (Max) @ Id	2 V

Part	Supplier Device Package	Operating Temperature	Vgs (Max) [Min]	Vgs (Max) [Max]	Power Dissipation (Max)	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs	FET Type	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Package / Case
Toshiba Semiconductor and Storage TJ90S04M3L,LXHQ	DPAK+	175 °C	-20 V	10 V	180 W	MOSFET (Metal Oxide)	7700 pF	172 nC	P-Channel	2 V	90 A	4.3 mOhm	Surface Mount	4.5 V 10 V	40 V	DPAK (2 Leads + Tab) SC-63 TO-252-3

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General part information

P-Channel 40 V 90A (Ta) 180W (Tc) Surface Mount DPAK+

Technical documentation and resources

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