TJ90S04M3L Series

Catalog

HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, P-CH MOSFET, -40 V, -90 A, 0.0043 Ω@10V, DPAK+

Part	Technology	Power Dissipation (Max)	FET Type	Operating Temperature	Package Name	Rds On (Max)	Mounting Type	Vgs (Max) Negative	Vgs (Max) Positive	Vgs(th) (Max)	Input Capacitance (Ciss) (Max)	Current - Continuous Drain (Id) (Ta)	Drain to Source Voltage (Vdss)	Package / Case	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Grade	Qualification	Gate Charge (Max)
Toshiba Semiconductor and Storage TJ90S04M3L,LQ	MOSFET (Metal Oxide)	180 W	P-Channel	175 °C	DPAK+	4.3 mOhm	Surface Mount	-20 V	10 V	2 V	7700 pF	90 A	40 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	10 V	4.5 V	Automotive	AEC-Q101	172 nC
Toshiba Semiconductor and Storage TJ90S04M3L,LXHQ	MOSFET (Metal Oxide)	180 W	P-Channel	175 °C	DPAK+	4.3 mOhm	Surface Mount	-20 V	10 V	2 V	7700 pF	90 A	40 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	10 V	4.5 V	Automotive	AEC-Q101	172 nC