MOSFET P-CH 40V 90A DPAK
| Part | Supplier Device Package | Operating Temperature | Vgs (Max) [Min] | Vgs (Max) [Max] | Power Dissipation (Max) | Technology | Input Capacitance (Ciss) (Max) @ Vds [Max] | Gate Charge (Qg) (Max) @ Vgs | FET Type | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | DPAK+ | 175 °C | -20 V | 10 V | 180 W | MOSFET (Metal Oxide) | 7700 pF | 172 nC | P-Channel | 2 V | 90 A | 4.3 mOhm | Surface Mount | 4.5 V 10 V | 40 V | DPAK (2 Leads + Tab) SC-63 TO-252-3 |