SSM3K335R,LF

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Toshiba Semiconductor and Storage

MOSFET N CH 30V 6A SOT-23F

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Toshiba Semiconductor and Storage

MOSFET N CH 30V 6A SOT-23F

Technical Specifications

Parameters and characteristics for this part

Specification	SSM3K335R,LF

Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	2.7 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	340 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3 Flat Leads
Power Dissipation (Max)	1 W
Rds On (Max) @ Id, Vgs	38 mOhm
Supplier Device Package	SOT-23F
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Drain to Source Voltage (Vdss)	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Operating Temperature	Vgs (Max)	Supplier Device Package	Power Dissipation (Max)	Technology	FET Type
Toshiba Semiconductor and Storage SSM3K335R,LF	30 V	SOT-23-3 Flat Leads	2.7 nC	38 mOhm	2.5 V	6 A	340 pF	4.5 V 10 V	Surface Mount	150 °C	20 V	SOT-23F	1 W	MOSFET (Metal Oxide)	N-Channel

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General part information

N-Channel 30 V 6A (Ta) 1W (Ta) Surface Mount SOT-23F

Technical documentation and resources

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