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MOSFET N CH 30V 6A SOT-23F
| Part | Drain to Source Voltage (Vdss) | Package / Case | Gate Charge (Qg) (Max) @ Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds [Max] | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Operating Temperature | Vgs (Max) | Supplier Device Package | Power Dissipation (Max) | Technology | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 30 V | SOT-23-3 Flat Leads | 2.7 nC | 38 mOhm | 2.5 V | 6 A | 340 pF | 4.5 V 10 V | Surface Mount | 150 °C | 20 V | SOT-23F | 1 W | MOSFET (Metal Oxide) | N-Channel |