IRF2907ZSTRLPBF

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Infineon Technologies

IR MOSFET™ N-CHANNEL POWER MOSFET ; D2PAK TO-263 PACKAGE; 4.5 MOHM;

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Infineon Technologies

IR MOSFET™ N-CHANNEL POWER MOSFET ; D2PAK TO-263 PACKAGE; 4.5 MOHM;

Technical Specifications

Parameters and characteristics for this part

Specification	IRF2907ZSTRLPBF

Current - Continuous Drain (Id) @ 25°C	160 A
Drain to Source Voltage (Vdss)	75 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	270 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	7500 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	300 W
Rds On (Max) @ Id, Vgs	4.5 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]	FET Type	Vgs (Max)	Rds On (Max) @ Id, Vgs	Package / Case	Technology
Infineon Technologies IRF2907ZSTRLPBF	4 V	7500 pF	160 A	Surface Mount	D2PAK	10 V	75 V	-55 °C	175 ░C	270 nC	300 W	N-Channel	20 V	4.5 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)

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General part information

N-Channel 75 V 160A (Tc) 300W (Tc) Surface Mount D2PAK

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