IR MOSFET™ N-CHANNEL POWER MOSFET ; D2PAK TO-263 PACKAGE; 4.5 MOHM;
| Part | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds [Max] | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) [Max] | FET Type | Vgs (Max) | Rds On (Max) @ Id, Vgs | Package / Case | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 4 V | 7500 pF | 160 A | Surface Mount | D2PAK | 10 V | 75 V | -55 °C | 175 ░C | 270 nC | 300 W | N-Channel | 20 V | 4.5 mOhm | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | MOSFET (Metal Oxide) |