BSZ123N08NS3GATMA1

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Infineon Technologies

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 80 V ; PQFN 3.3 X 3.3 PACKAGE; 12.3 MOHM;

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BSZ123N08NS3GATMA1

Active

Infineon Technologies

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 80 V ; PQFN 3.3 X 3.3 PACKAGE; 12.3 MOHM;

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	BSZ123N08NS3GATMA1

Current - Continuous Drain (Id) @ 25°C	40 A, 10 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	25 nC
Input Capacitance (Ciss) (Max) @ Vds	1700 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	66 W, 2.1 W
Rds On (Max) @ Id, Vgs	12.3 mOhm
Supplier Device Package	PG-TSDSON-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

BSZ123 Series

Part	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Vgs (Max)	Technology	FET Type
Infineon Technologies BSZ123N08NS3GATMA1	Surface Mount	10 A 40 A	2.1 W 66 W	25 nC	8-PowerVDFN	-55 °C	150 °C	3.5 V	1700 pF	6 V 10 V	PG-TSDSON-8	80 V	12.3 mOhm	20 V	MOSFET (Metal Oxide)	N-Channel

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.50
		10	$ 1.13
		100	$ 0.85
		500	$ 0.70
		1000	$ 0.59
		2000	$ 0.61
	Digi-Reel®	1	$ 1.50
		10	$ 1.13
		100	$ 0.85
		500	$ 0.70
		1000	$ 0.59
		2000	$ 0.61
	Tape & Reel (TR)	5000	$ 0.48

Description

General part information

BSZ123 Series

The BSZ123N08NS3 G is a 80V N-channel Power MOSFET that offers highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). The OptiMOS™ MOSFET offers industry's lowest RDS (on) within the voltage classes. It is ideally suited for high frequency switching applications and optimized technology for DC-DC converters.

Documents

Technical documentation and resources