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OPTIMOS™ 3 N-CHANNEL POWER MOSFET 80 V ; PQFN 3.3 X 3.3 PACKAGE; 12.3 MOHM;
| Part | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Package / Case | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Vgs (Max) | Technology | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | Surface Mount | 10 A 40 A | 2.1 W 66 W | 25 nC | 8-PowerVDFN | -55 °C | 150 °C | 3.5 V | 1700 pF | 6 V 10 V | PG-TSDSON-8 | 80 V | 12.3 mOhm | 20 V | MOSFET (Metal Oxide) | N-Channel |