IRF9530NSTRLPBF

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Infineon Technologies

MOSFET, P-CH, -100V, -14A, TO-263AB

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Infineon Technologies

MOSFET, P-CH, -100V, -14A, TO-263AB

Technical Specifications

Parameters and characteristics for this part

Specification	IRF9530NSTRLPBF

Current - Continuous Drain (Id) @ 25°C	14 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	58 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	79 W, 3.8 W
Rds On (Max) @ Id, Vgs	200 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Power Dissipation (Max)	Vgs (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Technology	Supplier Device Package	Package / Case	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	FET Type
Infineon Technologies IRF9530NSTRLPBF	3.8 W 79 W	20 V	200 mOhm	-55 °C	175 ░C	58 nC	14 A	100 V	MOSFET (Metal Oxide)	D2PAK	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	4 V	10 V	Surface Mount	P-Channel
Infineon Technologies IRF9530NPBF	79 W	20 V	200 mOhm	-55 °C	175 ░C	58 nC	14 A	100 V	MOSFET (Metal Oxide)	TO-220AB	TO-220-3	4 V	10 V	Through Hole	P-Channel

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