Beta
⌘K
MOSFET, P-CH, -100V, -14A, TO-263AB
| Part | Power Dissipation (Max) | Vgs (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Technology | Supplier Device Package | Package / Case | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 3.8 W 79 W | 20 V | 200 mOhm | -55 °C | 175 ░C | 58 nC | 14 A | 100 V | MOSFET (Metal Oxide) | D2PAK | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 4 V | 10 V | Surface Mount | P-Channel |
Infineon Technologies | 79 W | 20 V | 200 mOhm | -55 °C | 175 ░C | 58 nC | 14 A | 100 V | MOSFET (Metal Oxide) | TO-220AB | TO-220-3 | 4 V | 10 V | Through Hole | P-Channel |