DMP610DL-13

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Diodes Inc

P-CHANNEL ENHANCEMENT MODE MOSFET

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Diodes Inc

P-CHANNEL ENHANCEMENT MODE MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	DMP610DL-13

Current - Continuous Drain (Id) @ 25°C	180 mA
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	0.56 nC
Input Capacitance (Ciss) (Max) @ Vds	24.6 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	310 mW
Rds On (Max) @ Id, Vgs	10 Ohm
Supplier Device Package	SOT-23-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	2 V

P-Channel Enhancement Mode MOSFET

Part	Gate Charge (Qg) (Max) @ Vgs	Technology	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Package / Case	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	FET Type	Drain to Source Voltage (Vdss)	Vgs (Max)
Diodes Inc DMP610DL-13	0.56 nC	MOSFET (Metal Oxide)	Surface Mount	-55 °C	150 °C	310 mW	2 V	24.6 pF	5 V	10 Ohm	SC-59 SOT-23-3 TO-236-3	180 mA	SOT-23-3	P-Channel	60 V	30 V
Diodes Inc DMP610DL-7	0.56 nC	MOSFET (Metal Oxide)	Surface Mount	-55 °C	150 °C	310 mW	2 V	24.6 pF	5 V	10 Ohm	SC-59 SOT-23-3 TO-236-3	180 mA	SOT-23-3	P-Channel	60 V	30 V

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General part information

P-Channel Enhancement Mode MOSFET

Technical documentation and resources