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P-Channel Enhancement Mode MOSFET
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P-Channel Enhancement Mode MOSFET
P-Channel Enhancement Mode MOSFET
| Part | Gate Charge (Qg) (Max) @ Vgs | Technology | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Package / Case | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | FET Type | Drain to Source Voltage (Vdss) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | 0.56 nC | MOSFET (Metal Oxide) | Surface Mount | -55 °C | 150 °C | 310 mW | 2 V | 24.6 pF | 5 V | 10 Ohm | SC-59 SOT-23-3 TO-236-3 | 180 mA | SOT-23-3 | P-Channel | 60 V | 30 V |
Diodes Inc | 0.56 nC | MOSFET (Metal Oxide) | Surface Mount | -55 °C | 150 °C | 310 mW | 2 V | 24.6 pF | 5 V | 10 Ohm | SC-59 SOT-23-3 TO-236-3 | 180 mA | SOT-23-3 | P-Channel | 60 V | 30 V |