The UCC2751xA-Q1 single-channel high-speed low-side gate driver devices effectively drive MOSFET and IGBT power switches. With a design that inherently minimizes shoot-through current, the UCC2751xA-Q1 family of devices sources and sinks high, peak-current pulses into capacitive loads offering rail-to-rail drive capability and extremely small propagation delay typically 17 ns.

The UCC2751xA-Q1 family of devices provides 4-A source, 4-A sink (symmetrical drive) peak-drive current capability at VDD = 12 V.

The UCC2751xA-Q1 family of devices operates over a wide VDD range of 4.5 V to 18 V and wide temperature range of –40°C to 140°C. Internal undervoltage lockout (UVLO) circuitry on VDD pin holds output low outside VDD operating range. The ability to operate at low voltage levels such as below 5 V, along with best in class switching characteristics, is especially suited for driving emerging wide band-gap power switching devices such as GaN power-semiconductor devices.Read more