IRF6797MTRPBF

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Infineon Technologies

STRONGIRFET™ N-CHANNEL POWER MOSFET ; DIRECTFET™ M PACKAGE; 1.4 MOHM; SCHOTTKY

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IRF6797MTRPBF

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Infineon Technologies

STRONGIRFET™ N-CHANNEL POWER MOSFET ; DIRECTFET™ M PACKAGE; 1.4 MOHM; SCHOTTKY

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IRF6797MTRPBF

Current - Continuous Drain (Id) @ 25°C	36 A, 210 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	68 nC
Input Capacitance (Ciss) (Max) @ Vds	5790 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	DirectFET™ Isometric MX
Power Dissipation (Max)	2.8 W, 89 W
Rds On (Max) @ Id, Vgs	1.4 mOhm
Supplier Device Package	DIRECTFET™ MX
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.35 V

IRF6797 Series

Part	Vgs (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Rds On (Max) @ Id, Vgs	FET Type	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Technology	Drain to Source Voltage (Vdss)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds
Infineon Technologies IRF6797MTRPBF	20 V	150 °C	-40 °C	Surface Mount	1.4 mOhm	N-Channel	2.35 V	68 nC	36 A 210 A	2.8 W 89 W	DirectFET™ Isometric MX	4.5 V 10 V	MOSFET (Metal Oxide)	25 V	DIRECTFET™ MX	5790 pF
Infineon Technologies IRF6797MTRPBF	20 V	150 °C	-40 °C	Surface Mount	1.4 mOhm	N-Channel	2.35 V	68 nC	36 A 210 A	2.8 W 89 W	DirectFET™ Isometric MX	4.5 V 10 V	MOSFET (Metal Oxide)	25 V	DIRECTFET™ MX	5790 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	198	$ 1.52
		198	$ 1.52
		241	$ 1.25
		241	$ 1.25

Description

General part information

IRF6797 Series

The StrongIRFET™ power MOSFET family is optimized for low RDS(on)and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

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Technical documentation and resources