Beta
⌘K
STRONGIRFET™ N-CHANNEL POWER MOSFET ; DIRECTFET™ M PACKAGE; 1.4 MOHM; SCHOTTKY
| Part | Vgs (Max) | Operating Temperature [Max] | Operating Temperature [Min] | Mounting Type | Rds On (Max) @ Id, Vgs | FET Type | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Technology | Drain to Source Voltage (Vdss) | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 20 V | 150 °C | -40 °C | Surface Mount | 1.4 mOhm | N-Channel | 2.35 V | 68 nC | 36 A 210 A | 2.8 W 89 W | DirectFET™ Isometric MX | 4.5 V 10 V | MOSFET (Metal Oxide) | 25 V | DIRECTFET™ MX | 5790 pF |
Infineon Technologies | 20 V | 150 °C | -40 °C | Surface Mount | 1.4 mOhm | N-Channel | 2.35 V | 68 nC | 36 A 210 A | 2.8 W 89 W | DirectFET™ Isometric MX | 4.5 V 10 V | MOSFET (Metal Oxide) | 25 V | DIRECTFET™ MX | 5790 pF |