IDW10G65C5XKSA1
ActiveCOOLSIC™ G5 SILICON CARBIDE SCHOTTKY DIODE 650 V 15 NC TO-247
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IDW10G65C5XKSA1
ActiveCOOLSIC™ G5 SILICON CARBIDE SCHOTTKY DIODE 650 V 15 NC TO-247
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Technical Specifications
Parameters and characteristics for this part
| Specification | IDW10G65C5XKSA1 |
|---|---|
| Capacitance @ Vr, F | 300 pF |
| Current - Average Rectified (Io) | 10 A |
| Current - Reverse Leakage @ Vr | 180 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -55 C |
| Package / Case | TO-247-3 |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Supplier Device Package | PG-TO247-3 |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 4.37 | |
| 30 | $ 3.46 | |||
| 120 | $ 2.97 | |||
| 510 | $ 2.64 | |||
| 1020 | $ 2.26 | |||
| 2010 | $ 2.13 | |||
Description
General part information
IDW10G65 Series
CoolSiC™ generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Thanks to the more compact design and thinwafer technology, the family of products shows improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qcx Vf).The CoolSiC™ Generation 5 has been designed to complement our 650V CoolMOS™ families: this ensures meeting the most stringent application requirements in this voltage range.
Documents
Technical documentation and resources