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COOLSIC™ G5 SILICON CARBIDE SCHOTTKY DIODE 650 V 15 NC TO-247
| Part | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Current - Reverse Leakage @ Vr | Package / Case | Mounting Type | Voltage - Forward (Vf) (Max) @ If | Speed | Supplier Device Package | Current - Average Rectified (Io) | Capacitance @ Vr, F | Voltage - DC Reverse (Vr) (Max) [Max] | Technology | Reverse Recovery Time (trr) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 175 ░C | -55 C | 180 µA | TO-247-3 | Through Hole | 1.7 V | No Recovery Time | PG-TO247-3 | 10 A | 300 pF | 650 V | SiC (Silicon Carbide) Schottky | 0 ns |