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IXTP8N70X2M - IXFP30N25X3M

IXTP8N70X2M

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IXYS

MOSFET N-CH 700V 4A TO220

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IXTP8N70X2M - IXFP30N25X3M

IXTP8N70X2M

Active
IXYS

MOSFET N-CH 700V 4A TO220

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIXTP8N70X2M
Current - Continuous Drain (Id) @ 25°C4 A
Drain to Source Voltage (Vdss)700 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]12 nC
Input Capacitance (Ciss) (Max) @ Vds800 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3 Full Pack, Isolated Tab
Power Dissipation (Max)32 W
Rds On (Max) @ Id, Vgs550 mOhm
Supplier Device PackageTO-220 Isolated Tab
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 300$ 1.79

Description

General part information

IXTP8 Series

N-Channel 700 V 4A (Tc) 32W (Tc) Through Hole TO-220 Isolated Tab

Documents

Technical documentation and resources

No documents available