MOSFET N-CH 700V 4A TO220
| Part | Drain to Source Voltage (Vdss) | FET Type | Vgs(th) (Max) @ Id | Package / Case | Current - Continuous Drain (Id) @ 25°C | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Supplier Device Package | Power Dissipation (Max) | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) [Max] | Gate Charge (Qg) (Max) @ Vgs [x] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXYS | 700 V | N-Channel | 5 V | TO-220-3 Full Pack Isolated Tab | 4 A | MOSFET (Metal Oxide) | -55 °C | 150 °C | 550 mOhm | 10 V | Through Hole | TO-220 Isolated Tab | 32 W | 30 V | 12 nC | 800 pF | ||
IXYS | 700 V | N-Channel | 5 V | TO-220-3 | 8 A | MOSFET (Metal Oxide) | -55 °C | 150 °C | 500 mOhm | 10 V | Through Hole | TO-220-3 | 150 W | 30 V | 12 nC | 800 pF | ||
IXYS | 500 V | N-Channel | 5.5 V | TO-220-3 | 4 A | MOSFET (Metal Oxide) | -55 °C | 150 °C | 800 mOhm | 10 V | Through Hole | TO-220-3 | 30 V | 1050 pF | 41 W | 20 nC | ||
IXYS | 500 V | N-Channel | 5.5 V | TO-220-3 | 8 A | MOSFET (Metal Oxide) | -55 °C | 150 °C | 800 mOhm | 10 V | Through Hole | TO-220-3 | 150 W | 30 V | 1050 pF | 20 nC |