6A06B-G

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Comchip Technology

DIODE GEN PURP 600V 6A R-6

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Comchip Technology

DIODE GEN PURP 600V 6A R-6

Technical Specifications

Parameters and characteristics commom to parts in this series

Specification	6A06B-G	6A06 Series

Capacitance @ Vr, F	100 pF	100 pF
Current - Average Rectified (Io)	6 A	6 A
Current - Reverse Leakage @ Vr	10 µA	10 µA
Mounting Type	Through Hole	Through Hole
Operating Temperature - Junction [Max]	125 °C	125 °C
Operating Temperature - Junction [Min]	-55 °C	-55 °C
Package / Case	R-6, Axial	R-6, Axial
Speed	Standard Recovery >500ns	Standard Recovery >500ns
Speed	200 mA	200 mA
Supplier Device Package	R-6	R-6
Technology	Standard	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V	600 V
Voltage - Forward (Vf) (Max) @ If	1 V	1 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	1000	$ 0.22

DIODE GEN PURP 600V 6A R-6

Part	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Mounting Type	Technology	Capacitance @ Vr, F	Voltage - Forward (Vf) (Max) @ If	Package / Case	Supplier Device Package	Current - Reverse Leakage @ Vr	Speed	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)
Comchip Technology 6A06-G	-55 °C	125 °C	Through Hole	Standard	100 pF	1 V	R-6, Axial	R-6	10 µA	Standard Recovery >500ns	200 mA	600 V	6 A
Comchip Technology 6A06B-G	-55 °C	125 °C	Through Hole	Standard	100 pF	1 V	R-6, Axial	R-6	10 µA	Standard Recovery >500ns	200 mA	600 V	6 A

General part information

Diode 600 V 6A Through Hole R-6

Technical documentation and resources

No documents available