DIODE GEN PURP 600V 6A R-6
| Part | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] | Mounting Type | Technology | Capacitance @ Vr, F | Voltage - Forward (Vf) (Max) @ If | Package / Case | Supplier Device Package | Current - Reverse Leakage @ Vr | Speed | Speed | Voltage - DC Reverse (Vr) (Max) [Max] | Current - Average Rectified (Io) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Comchip Technology 6A06-G | -55 °C | 125 °C | Through Hole | Standard | 100 pF | 1 V | R-6, Axial | R-6 | 10 µA | Standard Recovery >500ns | 200 mA | 600 V | 6 A |
Comchip Technology 6A06B-G | -55 °C | 125 °C | Through Hole | Standard | 100 pF | 1 V | R-6, Axial | R-6 | 10 µA | Standard Recovery >500ns | 200 mA | 600 V | 6 A |