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STB23N80K5 - D2Pak

STB23N80K5

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STMicroelectronics

N-CHANNEL 800 V, 0.23 OHM TYP., 16 A MDMESH K5 POWER MOSFET IN D2PAK PACKAGE

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Search across all available documentation for this part.

DocumentsDatasheetProduct Change Notice EN+16
STB23N80K5 - D2Pak

STB23N80K5

Active
STMicroelectronics

N-CHANNEL 800 V, 0.23 OHM TYP., 16 A MDMESH K5 POWER MOSFET IN D2PAK PACKAGE

Deep-Dive with AI

DocumentsDatasheetProduct Change Notice EN+16

Technical Specifications

Parameters and characteristics for this part

SpecificationSTB23N80K5
Current - Continuous Drain (Id) @ 25°C16 A
Drain to Source Voltage (Vdss)800 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]1000 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]190 W
Rds On (Max) @ Id, Vgs280 mOhm
Supplier Device PackageTO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 4.91
10$ 4.12
100$ 3.34
500$ 2.96
Digi-Reel® 1$ 4.91
10$ 4.12
100$ 3.34
500$ 2.96
Tape & Reel (TR) 1000$ 2.54
2000$ 2.39
NewarkEach (Supplied on Cut Tape) 1$ 6.27
10$ 4.88
25$ 4.58
50$ 4.28
100$ 4.04
250$ 3.83
500$ 3.75
1000$ 3.68

Description

General part information

STB23N80K5 Series

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.