STB23N80K5 Series

N-channel 800 V, 0.23 Ohm typ., 16 A MDmesh K5 Power MOSFET in D2PAK package

Catalog

N-channel 800 V, 0.23 Ohm typ., 16 A MDmesh K5 Power MOSFET in D2PAK package

Part	Vgs(th) (Max) @ Id	Package / Case	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Power Dissipation (Max) [Max]	Vgs (Max)	FET Type	Mounting Type
STMicroelectronics STB23N80K5	5 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	800 V	1000 pF	10 V	280 mOhm	16 A	MOSFET (Metal Oxide)	-55 °C	150 °C	TO-263 (D2PAK)	190 W	30 V	N-Channel	Surface Mount

Catalog

N-channel 800 V, 0.23 Ohm typ., 16 A MDmesh K5 Power MOSFET in D2PAK package

Description

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.