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STE53NC50 - ISOTOP

STE53NC50

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STMicroelectronics

BIPOLAR (BJT) SINGLE TRANSISTOR, N CHANNEL, 53 A, 500 V, 0.08 OHM, 10 V, 4 V

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STE53NC50 - ISOTOP

STE53NC50

Active
STMicroelectronics

BIPOLAR (BJT) SINGLE TRANSISTOR, N CHANNEL, 53 A, 500 V, 0.08 OHM, 10 V, 4 V

Deep-Dive with AI

DocumentsDatasheetDatasheet+20

Technical Specifications

Parameters and characteristics for this part

SpecificationSTE53NC50
Current - Continuous Drain (Id) @ 25°C53 A
Drain to Source Voltage (Vdss)500 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs434 nC
Input Capacitance (Ciss) (Max) @ Vds11200 pF
Mounting TypeChassis Mount
Operating Temperature150 °C
Package / CaseISOTOP
Power Dissipation (Max)460 W
Rds On (Max) @ Id, Vgs80 mOhm
Supplier Device PackageISOTOP®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 41.37
10$ 36.87
100$ 32.36
NewarkEach 1$ 41.76
5$ 36.34
10$ 30.91
30$ 30.86
50$ 30.82
100$ 28.60
250$ 28.21

Description

General part information

STE53NC50 Series

The PowerMESHTMII is the evolution of the first generation of MESH OVERLAYTM. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.