STE53NC50 Series

N-CHANNEL 500V 0.070 OHM 53A ISOTOP POWERMESH II MOSFET

Catalog

N-CHANNEL 500V 0.070 OHM 53A ISOTOP POWERMESH II MOSFET

Part	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Operating Temperature	FET Type	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Technology	Mounting Type	Drain to Source Voltage (Vdss)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package
STMicroelectronics STE53NC50	80 mOhm	460 W	150 °C	N-Channel	4 V	434 nC	30 V	10 V	53 A	MOSFET (Metal Oxide)	Chassis Mount	500 V	ISOTOP	11200 pF	ISOTOP®

Catalog

N-CHANNEL 500V 0.070 OHM 53A ISOTOP POWERMESH II MOSFET

Description

The PowerMESHTMII is the evolution of the first generation of MESH OVERLAYTM. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.