SSM6J402TU,LF

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Toshiba Semiconductor and Storage

MOSFET P-CH 30V 2A UF6

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Toshiba Semiconductor and Storage

MOSFET P-CH 30V 2A UF6

Technical Specifications

Parameters and characteristics for this part

Specification	SSM6J402TU,LF

Current - Continuous Drain (Id) @ 25°C	2 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	5.3 nC
Input Capacitance (Ciss) (Max) @ Vds	280 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-SMD, Flat Leads
Power Dissipation (Max) [Max]	500 mW
Rds On (Max) @ Id, Vgs	117 mOhm
Supplier Device Package	UF6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.6 V

Part	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Operating Temperature	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Mounting Type	FET Type	Supplier Device Package	Technology	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs
Toshiba Semiconductor and Storage SSM6J402TU,LF	2 A	2.6 V	20 V	5.3 nC	4 V	10 V	150 °C	500 mW	280 pF	6-SMD Flat Leads	Surface Mount	P-Channel	UF6	MOSFET (Metal Oxide)	30 V	117 mOhm

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General part information

P-Channel 30 V 2A (Ta) 500mW (Ta) Surface Mount UF6

Technical documentation and resources