MOSFET P-CH 30V 2A UF6
| Part | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Operating Temperature | Power Dissipation (Max) [Max] | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Mounting Type | FET Type | Supplier Device Package | Technology | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 2 A | 2.6 V | 20 V | 5.3 nC | 4 V | 10 V | 150 °C | 500 mW | 280 pF | 6-SMD Flat Leads | Surface Mount | P-Channel | UF6 | MOSFET (Metal Oxide) | 30 V | 117 mOhm |