IPA50R500CE

Obsolete

Infineon Technologies

500V 11.1A 500MΩ@13V,2.3A 28W 3.5V TO-220FP-3 MOSFETS ROHS

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Obsolete

Infineon Technologies

500V 11.1A 500MΩ@13V,2.3A 28W 3.5V TO-220FP-3 MOSFETS ROHS

Technical Specifications

Parameters and characteristics for this part

Specification	IPA50R500CE

Current - Continuous Drain (Id) @ 25°C	7.6 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	13 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	18.7 nC
Input Capacitance (Ciss) (Max) @ Vds	433 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max) [Max]	28 W
Rds On (Max) @ Id, Vgs	500 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Vgs (Max)	Power Dissipation (Max) [Max]	Supplier Device Package	FET Type	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs [custom]	Vgs(th) (Max) @ Id [Max]
Infineon Technologies IPA50R800CE	20 V	26.4 W	PG-TO220-FP	N-Channel	800 mOhm	3.5 V	280 pF	500 V	12.4 nC	Through Hole	13 V	5 A	MOSFET (Metal Oxide)	150 °C	-40 °C	TO-220-3 Full Pack
Infineon Technologies IPA50R380CE	20 V	29.2 W	PG-TO220-FP	N-Channel	380 mOhm	3.5 V		500 V	24.8 nC	Through Hole	13 V	9.9 A	MOSFET (Metal Oxide)	150 °C	-55 °C	TO-220-3 Full Pack	584 pF
Infineon Technologies IPA50R650CEXKSA2	20 V		PG-TO220-3-FP	N-Channel	650 mOhm	3.5 V	342 pF	500 V		Through Hole	13 V	4.6 A	MOSFET (Metal Oxide)	150 °C	-40 °C	TO-220-3 Full Pack		27.2 W
Infineon Technologies IPA50R500CE	20 V	28 W		N-Channel	500 mOhm	3.5 V		500 V		Through Hole	13 V	7.6 A	MOSFET (Metal Oxide)	150 °C	-40 °C	TO-220-3 Full Pack	433 pF		18.7 nC
Infineon Technologies IPA50R280CE	20 V			N-Channel	280 mOhm			500 V		Through Hole	13 V	13 A	MOSFET (Metal Oxide)	150 °C	-55 °C	TO-220-3 Full Pack	773 pF			32.6 nC	3.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 500 V 7.6A (Tc) 28W (Tc) Through Hole PG-TO220-3-31

Technical documentation and resources

No documents available