IPA50R Series

Catalog

MOSFET N-CH 500V 5A TO220-FP

Part	Vgs (Max)	Power Dissipation (Max) [Max]	Supplier Device Package	FET Type	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Technology	Operating Temperature [Max]	Operating Temperature [Min]	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs [custom]	Vgs(th) (Max) @ Id [Max]
Infineon Technologies IPA50R800CE	20 V	26.4 W	PG-TO220-FP	N-Channel	800 mOhm	3.5 V	280 pF	500 V	12.4 nC	Through Hole	13 V	5 A	MOSFET (Metal Oxide)	150 °C	-40 °C	TO-220-3 Full Pack
Infineon Technologies IPA50R380CE	20 V	29.2 W	PG-TO220-FP	N-Channel	380 mOhm	3.5 V		500 V	24.8 nC	Through Hole	13 V	9.9 A	MOSFET (Metal Oxide)	150 °C	-55 °C	TO-220-3 Full Pack	584 pF
Infineon Technologies IPA50R650CEXKSA2	20 V		PG-TO220-3-FP	N-Channel	650 mOhm	3.5 V	342 pF	500 V		Through Hole	13 V	4.6 A	MOSFET (Metal Oxide)	150 °C	-40 °C	TO-220-3 Full Pack		27.2 W
Infineon Technologies IPA50R500CE	20 V	28 W		N-Channel	500 mOhm	3.5 V		500 V		Through Hole	13 V	7.6 A	MOSFET (Metal Oxide)	150 °C	-40 °C	TO-220-3 Full Pack	433 pF		18.7 nC
Infineon Technologies IPA50R280CE	20 V			N-Channel	280 mOhm			500 V		Through Hole	13 V	13 A	MOSFET (Metal Oxide)	150 °C	-55 °C	TO-220-3 Full Pack	773 pF			32.6 nC	3.5 V