IPB038N12N3GATMA1
ActivePOWER MOSFET, N CHANNEL, 120 V, 120 A, 0.0032 OHM, TO-263 (D2PAK), SURFACE MOUNT
Deep-Dive with AI
Search across all available documentation for this part.
IPB038N12N3GATMA1
ActivePOWER MOSFET, N CHANNEL, 120 V, 120 A, 0.0032 OHM, TO-263 (D2PAK), SURFACE MOUNT
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IPB038N12N3GATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 120 A |
| Drain to Source Voltage (Vdss) | 120 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 211 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 13800 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263AB, TO-263-3 |
| Power Dissipation (Max) [Max] | 300 W |
| Rds On (Max) @ Id, Vgs | 3.8 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IPB038 Series
The IPB038N12N3 G is an OptiMOS™ N-channel Power MOSFET offers at the same time the lowest ON-state resistances of the industry and the fastest switching behaviour, allowing for the achievement of outstanding performance in a wide range of applications. The 120V OptiMOS™ technology gives new possibilities for optimized solutions.
Documents
Technical documentation and resources