POWER MOSFET, N CHANNEL, 120 V, 120 A, 0.0032 OHM, TO-263 (D2PAK), SURFACE MOUNT
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) [Max] | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Mounting Type | Gate Charge (Qg) (Max) @ Vgs | FET Type | Package / Case | Rds On (Max) @ Id, Vgs | Technology | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | -55 °C | 175 ░C | 300 W | 120 V | 4 V | Surface Mount | 211 nC | N-Channel | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 3.8 mOhm | MOSFET (Metal Oxide) | 20 V | 10 V | 13800 pF | 120 A |