DMP2033UVT-7

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Diodes Inc

P-CHANNEL ENHANCEMENT MODE MOSFET

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Diodes Inc

P-CHANNEL ENHANCEMENT MODE MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	DMP2033UVT-7

Current - Continuous Drain (Id) @ 25°C	4.2 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	10.4 nC
Input Capacitance (Ciss) (Max) @ Vds	845 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Power Dissipation (Max)	1.2 W
Rds On (Max) @ Id, Vgs	65 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	900 mV

P-Channel Enhancement Mode MOSFET

Part	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Rds On (Max) @ Id, Vgs	FET Type	Mounting Type	Vgs(th) (Max) @ Id	Power Dissipation (Max)
Diodes Inc DMP2033UVT-7	1.8 V 4.5 V	10.4 nC	20 V	MOSFET (Metal Oxide)	-55 °C	150 °C	8 V	4.2 A	845 pF	SOT-23-6 Thin TSOT-23-6	65 mOhm	P-Channel	Surface Mount	900 mV	1.2 W
Diodes Inc DMP2033UVT-13	1.8 V 4.5 V	10.4 nC	20 V	MOSFET (Metal Oxide)	-55 °C	150 °C	8 V	4.2 A	845 pF	SOT-23-6 Thin TSOT-23-6	65 mOhm	P-Channel	Surface Mount	900 mV	1.2 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

TN1.pdf

Technical documentation and resources