Catalog
P-Channel Enhancement Mode MOSFET
Description
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P-Channel Enhancement Mode MOSFET
P-Channel Enhancement Mode MOSFET
| Part | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs [Max] | Drain to Source Voltage (Vdss) | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Rds On (Max) @ Id, Vgs | FET Type | Mounting Type | Vgs(th) (Max) @ Id | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | 1.8 V 4.5 V | 10.4 nC | 20 V | MOSFET (Metal Oxide) | -55 °C | 150 °C | 8 V | 4.2 A | 845 pF | SOT-23-6 Thin TSOT-23-6 | 65 mOhm | P-Channel | Surface Mount | 900 mV | 1.2 W |
Diodes Inc | 1.8 V 4.5 V | 10.4 nC | 20 V | MOSFET (Metal Oxide) | -55 °C | 150 °C | 8 V | 4.2 A | 845 pF | SOT-23-6 Thin TSOT-23-6 | 65 mOhm | P-Channel | Surface Mount | 900 mV | 1.2 W |