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BAT1504WH6327XTSA1 - PG-SOT323

BAT1504WH6327XTSA1

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Infineon Technologies

RF SCHOTTKY DIODE, SERIES, 4 V, 110 MA, 410 MV, 0.35 PF, SOT-323

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BAT1504WH6327XTSA1 - PG-SOT323

BAT1504WH6327XTSA1

Active
Infineon Technologies

RF SCHOTTKY DIODE, SERIES, 4 V, 110 MA, 410 MV, 0.35 PF, SOT-323

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationBAT1504WH6327XTSA1
Current - Max [Max]110 mA
Diode TypeSchottky - 1 Pair Series Connection
Operating Temperature150 °C
Package / CaseSC-70, SOT-323
Power Dissipation (Max) [Max]100 mW
Supplier Device PackagePG-SOT323
Voltage - Peak Reverse (Max) [Max]4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.59
10$ 0.52
25$ 0.49
100$ 0.40
250$ 0.37
500$ 0.32
1000$ 0.25
Digi-Reel® 1$ 0.59
10$ 0.52
25$ 0.49
100$ 0.40
250$ 0.37
500$ 0.32
1000$ 0.25
Tape & Reel (TR) 3000$ 0.23
6000$ 0.21
15000$ 0.20
30000$ 0.20
NewarkEach (Supplied on Cut Tape) 1$ 0.42
10$ 0.30
25$ 0.27
50$ 0.25
100$ 0.23
250$ 0.21
500$ 0.20
1000$ 0.20

Description

General part information

BAT1504 Series

This Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT15-04W a suitable choice for mixer and detector functions in applications which frequencies are as high as 12 GHz.

Documents

Technical documentation and resources