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BAT1504RE6152HTSA1 - SOT-23-3

BAT1504RE6152HTSA1

Active
Infineon Technologies

RF SCHOTTKY DIODE, DUAL SERIES, 4 V, 110 MA, 300 MV, 0.25 PF, SOT-23

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BAT1504RE6152HTSA1 - SOT-23-3

BAT1504RE6152HTSA1

Active
Infineon Technologies

RF SCHOTTKY DIODE, DUAL SERIES, 4 V, 110 MA, 300 MV, 0.25 PF, SOT-23

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationBAT1504RE6152HTSA1
Capacitance @ Vr, F0.25 pF
Current - Max [Max]110 mA
Diode TypeSchottky - 1 Pair Series Connection
Operating Temperature150 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Resistance @ If, F18 Ohm
Supplier Device PackagePG-SOT23
Voltage - Peak Reverse (Max) [Max]4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.48
10$ 0.41
100$ 0.29
500$ 0.22
1000$ 0.18
Digi-Reel® 1$ 0.48
10$ 0.41
100$ 0.29
500$ 0.22
1000$ 0.18
Tape & Reel (TR) 3000$ 0.16
6000$ 0.15
9000$ 0.14
30000$ 0.14
NewarkEach (Supplied on Cut Tape) 1$ 0.71
10$ 0.50
25$ 0.47
50$ 0.43
100$ 0.39
250$ 0.35
500$ 0.32
1000$ 0.28

Description

General part information

BAT1504 Series

This Infineon RF Schottky diode is silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT15-04R a suitable choice for mixer and detector functions in applications which frequencies are as high as 12 GHz.

Documents

Technical documentation and resources