BSC150N03LD

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Infineon Technologies

MOSFET 2N-CH 30V 8A 8TDSON

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Infineon Technologies

MOSFET 2N-CH 30V 8A 8TDSON

Technical Specifications

Parameters and characteristics for this part

Specification	BSC150N03LD

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	6.4 nC
Input Capacitance (Ciss) (Max) @ Vds	1100 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power - Max [Max]	26 W
Rds On (Max) @ Id, Vgs	15 mOhm
Supplier Device Package	PG-TDSON-8-4
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id [Max]	2.2 V

Part	Technology	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id [Max]	Mounting Type	Configuration	Gate Charge (Qg) (Max) @ Vgs [Max]	Power - Max [Max]	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	FET Feature	Package / Case	Rds On (Max) @ Id, Vgs
Infineon Technologies BSC150N03LD	MOSFET (Metal Oxide)	1100 pF	-55 °C	150 °C	2.2 V	Surface Mount	2 N-Channel (Dual)	6.4 nC	26 W	PG-TDSON-8-4	8 A	30 V	Logic Level Gate	8-PowerVDFN	15 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 30V 8A 26W Surface Mount PG-TDSON-8-4

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