MOSFET 2N-CH 30V 8A 8TDSON
| Part | Technology | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id [Max] | Mounting Type | Configuration | Gate Charge (Qg) (Max) @ Vgs [Max] | Power - Max [Max] | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | FET Feature | Package / Case | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | MOSFET (Metal Oxide) | 1100 pF | -55 °C | 150 °C | 2.2 V | Surface Mount | 2 N-Channel (Dual) | 6.4 nC | 26 W | PG-TDSON-8-4 | 8 A | 30 V | Logic Level Gate | 8-PowerVDFN | 15 mOhm |