IAUT150N10S5N035ATMA1

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Infineon Technologies

MOSFET, AEC-Q101, N-CH, 100V, HSOF

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Infineon Technologies

MOSFET, AEC-Q101, N-CH, 100V, HSOF

Technical Specifications

Parameters and characteristics for this part

Specification	IAUT150N10S5N035ATMA1

Current - Continuous Drain (Id) @ 25°C	150 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	87 nC
Input Capacitance (Ciss) (Max) @ Vds	6110 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerSFN
Power Dissipation (Max) [Max]	166 W
Rds On (Max) @ Id, Vgs	3.5 mOhm
Supplier Device Package	PG-HSOF-8-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	3.8 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id [Max]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Vgs (Max)	Power Dissipation (Max) [Max]	Mounting Type	Package / Case	Rds On (Max) @ Id, Vgs	Technology	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package
Infineon Technologies IAUT150N10S5N035ATMA1	87 nC	6110 pF	3.8 V	150 A	100 V	-55 °C	175 ░C	N-Channel	20 V	166 W	Surface Mount	8-PowerSFN	3.5 mOhm	MOSFET (Metal Oxide)	6 V 10 V	PG-HSOF-8-1

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General part information

N-Channel 100 V 150A (Tc) 166W (Tc) Surface Mount PG-HSOF-8-1

Technical documentation and resources