Beta
⌘K
MOSFET, AEC-Q101, N-CH, 100V, HSOF
| Part | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id [Max] | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Vgs (Max) | Power Dissipation (Max) [Max] | Mounting Type | Package / Case | Rds On (Max) @ Id, Vgs | Technology | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 87 nC | 6110 pF | 3.8 V | 150 A | 100 V | -55 °C | 175 ░C | N-Channel | 20 V | 166 W | Surface Mount | 8-PowerSFN | 3.5 mOhm | MOSFET (Metal Oxide) | 6 V 10 V | PG-HSOF-8-1 |