BSZ040N06LS5ATMA1

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Infineon Technologies

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 60 V ; PQFN 3.3 X 3.3 PACKAGE; 4 MOHM;

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BSZ040N06LS5ATMA1

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Infineon Technologies

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 60 V ; PQFN 3.3 X 3.3 PACKAGE; 4 MOHM;

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	BSZ040N06LS5ATMA1

Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	6.6 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	3100 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Rds On (Max) @ Id, Vgs	4 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.3 V

BSZ040 Series

Part	Supplier Device Package	Technology	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Current - Continuous Drain (Id) @ 25°C	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]
Infineon Technologies BSZ040N04LSGATMA1	PG-TSDSON-8	MOSFET (Metal Oxide)	4.5 V 10 V	2.1 W 69 W	20 V	64 nC	4 mOhm	-55 °C	150 °C	40 V	2 V	Surface Mount	5100 pF	N-Channel	18 A 40 A	8-PowerTDFN
Infineon Technologies BSZ040N06LS5ATMA1		MOSFET (Metal Oxide)	4.5 V 10 V		20 V		4 mOhm	-55 °C	150 °C	60 V	2.3 V	Surface Mount		N-Channel		8-PowerTDFN	6.6 nC	3100 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.81
		10	$ 1.28
		100	$ 0.91
		500	$ 0.75
		1000	$ 0.72
	Digi-Reel®	1	$ 1.81
		10	$ 1.28
		100	$ 0.91
		500	$ 0.75
		1000	$ 0.72
	Tape & Reel (TR)	5000	$ 0.65
Newark	Each (Supplied on Full Reel)	5000	$ 0.69

Description

General part information

BSZ040 Series

Infineon's OptiMOS™ 5 power MOSFETs logic level are highly suitable for wireless charging, adapter and telecom applications. The devices' low gate charge (Qg) reduces switching losses without compromising conduction losses. The improved figues of merit allow operations at high switching frequencies. Furthermore, the logic level drive provides a low gate threshold voltage (VGS(th)) allowing the MOSFETs to be driven at 5V and directly from microcontrollers.

Documents

Technical documentation and resources