BSZ040 Series

Catalog

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 40 V ; PQFN 3.3 X 3.3 PACKAGE; 4 MOHM;

Part	Supplier Device Package	Technology	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Current - Continuous Drain (Id) @ 25°C	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]
Infineon Technologies BSZ040N04LSGATMA1	PG-TSDSON-8	MOSFET (Metal Oxide)	4.5 V 10 V	2.1 W 69 W	20 V	64 nC	4 mOhm	-55 °C	150 °C	40 V	2 V	Surface Mount	5100 pF	N-Channel	18 A 40 A	8-PowerTDFN
Infineon Technologies BSZ040N06LS5ATMA1		MOSFET (Metal Oxide)	4.5 V 10 V		20 V		4 mOhm	-55 °C	150 °C	60 V	2.3 V	Surface Mount		N-Channel		8-PowerTDFN	6.6 nC	3100 pF