AUIRF540Z

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Infineon Technologies

INFINEON’S AUIRF540Z MOSFET WITH ADVANCED PROCESS TECHNOLOGY, ULTRA-LOW ON-RESISTANCE, 175°C OPERATING TEMP, AND AUTOMOTIVE QUALIFIED. FIND DATA SHEET, PARAMETERS AND ORDERING INFORMATION.

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DocumentsDatasheet Technical Data Sheet EN +1

AUIRF540Z

Active

Infineon Technologies

INFINEON’S AUIRF540Z MOSFET WITH ADVANCED PROCESS TECHNOLOGY, ULTRA-LOW ON-RESISTANCE, 175°C OPERATING TEMP, AND AUTOMOTIVE QUALIFIED. FIND DATA SHEET, PARAMETERS AND ORDERING INFORMATION.

Deep-Dive with AI

DocumentsDatasheet Technical Data Sheet EN +1

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	AUIRF540Z

Current - Continuous Drain (Id) @ 25°C	36 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	63 nC
Input Capacitance (Ciss) (Max) @ Vds	1770 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	92 W
Rds On (Max) @ Id, Vgs	26.5 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

AUIRF540 Series

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Technology	FET Type	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Vgs (Max)	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id
Infineon Technologies AUIRF540Z	63 nC	Through Hole	MOSFET (Metal Oxide)	N-Channel	36 A	TO-220AB	20 V	26.5 mOhm	10 V	-55 °C	175 ░C	TO-220-3	92 W	100 V	1770 pF	4 V
Infineon Technologies AUIRF540ZSTRL	63 nC	Surface Mount	MOSFET (Metal Oxide)	N-Channel	36 A		20 V	26.5 mOhm	10 V	-55 °C	175 ░C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	92 W	100 V	1770 pF	4 V
Infineon Technologies AUIRF540ZS	63 nC	Surface Mount	MOSFET (Metal Oxide)	N-Channel	36 A		20 V	26.5 mOhm	10 V	-55 °C	175 ░C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	92 W	100 V	1770 pF	4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 3.19
		10	$ 2.10
		100	$ 1.59
Newark	Each	1	$ 3.82
		10	$ 3.28
		25	$ 2.73
		50	$ 2.19
		100	$ 2.05
		250	$ 2.01
		500	$ 1.96

Description

General part information

AUIRF540 Series

The AUIRF540Z is a 100V single N-channel HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. It features combine to make this design an extremely efficient and reliable device for wide variety of applications.

Documents

Technical documentation and resources

Datasheet

Technical Data Sheet EN

Datasheet

EOL Notices EN

Datasheet