AUIRF540ZS

Obsolete

Infineon Technologies

MOSFET N-CH 100V 36A D2PAK

Search across all available documentation for this part.

Obsolete

Infineon Technologies

MOSFET N-CH 100V 36A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	AUIRF540ZS

Current - Continuous Drain (Id) @ 25°C	36 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	63 nC
Input Capacitance (Ciss) (Max) @ Vds	1770 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	92 W
Rds On (Max) @ Id, Vgs	26.5 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Technology	FET Type	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Vgs (Max)	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id
Infineon Technologies AUIRF540Z	63 nC	Through Hole	MOSFET (Metal Oxide)	N-Channel	36 A	TO-220AB	20 V	26.5 mOhm	10 V	-55 °C	175 ░C	TO-220-3	92 W	100 V	1770 pF	4 V
Infineon Technologies AUIRF540ZSTRL	63 nC	Surface Mount	MOSFET (Metal Oxide)	N-Channel	36 A		20 V	26.5 mOhm	10 V	-55 °C	175 ░C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	92 W	100 V	1770 pF	4 V
Infineon Technologies AUIRF540ZS	63 nC	Surface Mount	MOSFET (Metal Oxide)	N-Channel	36 A		20 V	26.5 mOhm	10 V	-55 °C	175 ░C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	92 W	100 V	1770 pF	4 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 100 V 36A (Tc) 92W (Tc) Surface Mount PG-TO263-3

Technical documentation and resources