STL60N32N3LL

Obsolete

STMicroelectronics

MOSFET 2N-CH 30V 32A/60A PWRFLAT

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STL60N32N3LL

Obsolete

STMicroelectronics

MOSFET 2N-CH 30V 32A/60A PWRFLAT

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DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STL60N32N3LL

Configuration	2 N-Channel (Dual) Asymmetrical
Current - Continuous Drain (Id) @ 25°C [Max]	60 A
Current - Continuous Drain (Id) @ 25°C [Min]	32 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	6.6 nC
Input Capacitance (Ciss) (Max) @ Vds	950 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power - Max [Max]	50 W
Power - Max [Min]	23 W
Rds On (Max) @ Id, Vgs	9.2 mOhm
Supplier Device Package	PowerFlat™ (5x6)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

STL60P4LLF6 Series

P-channel -40 V, 0.0115 Ohm typ., -60 A STripFET F6 Power MOSFET in a PowerFLAT 5x6 package

Part	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Technology	Package / Case	Vgs (Max)	Vgs(th) (Max) @ Id	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Rds On (Max) @ Id, Vgs	Mounting Type	FET Type	FET Feature	Power - Max [Min]	Power - Max [Max]	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C [Max]	Current - Continuous Drain (Id) @ 25°C [Min]	Configuration
STMicroelectronics STL60P4LLF6	4.5 V 10 V	3525 pF	40 V	60 A	100 W	MOSFET (Metal Oxide)	8-PowerVDFN	20 V	1 V	175 °C	34 nC	PowerFlat™ (5x6)	14 mOhm	Surface Mount	P-Channel
STMicroelectronics STL60N32N3LL		950 pF	30 V			MOSFET (Metal Oxide)	8-PowerVDFN		1 V			PowerFlat™ (5x6)	9.2 mOhm	Surface Mount		Logic Level Gate	23 W	50 W	6.6 nC	-55 °C	150 °C	60 A	32 A	2 N-Channel (Dual) Asymmetrical

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

STL60P4LLF6 Series

This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages.

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Technical documentation and resources