Technical Specifications
Parameters and characteristics for this part
| Specification | STL60P4LLF6 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 60 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 34 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 3525 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 175 °C |
| Package / Case | 8-PowerVDFN |
| Power Dissipation (Max) [Max] | 100 W |
| Rds On (Max) @ Id, Vgs | 14 mOhm |
| Supplier Device Package | PowerFlat™ (5x6) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STL60P4LLF6 Series
This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages.