STL60P4LLF6
ActiveP-CHANNEL -40 V, 0.0115 OHM TYP., -60 A STRIPFET F6 POWER MOSFET IN A POWERFLAT 5X6 PACKAGE
STL60P4LLF6
ActiveP-CHANNEL -40 V, 0.0115 OHM TYP., -60 A STRIPFET F6 POWER MOSFET IN A POWERFLAT 5X6 PACKAGE
Description
General part information
STL60 Series
This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss
Technical Specifications
Parameters and characteristics for this part
| Specification | STL60P4LLF6 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 60 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | P-Channel |
| Gate Charge (Max) | 34 nC |
| Input Capacitance (Ciss) (Max) | 3525 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 175 °C |
| Package / Case | 8-PowerVDFN |
| Package Length | 5 mm |
| Package Name | PowerFlat™ |
| Package Width | 6 mm |
| Power Dissipation (Max) | 100 W |
| Rds On (Max) | 14 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 1 V |
Pricing
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