IPD80R2K7C3AATMA1

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Infineon Technologies

800 V COOLMOS™ C3A AUTOMOTIVE POWER MOSFET DPAK (PG-TO252-3)

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DocumentsInfineon-IPD80R2K7C3A-DS-v01_01-EN IPD80R2K7C3A +3

IPD80R2K7C3AATMA1

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Infineon Technologies

800 V COOLMOS™ C3A AUTOMOTIVE POWER MOSFET DPAK (PG-TO252-3)

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DocumentsInfineon-IPD80R2K7C3A-DS-v01_01-EN IPD80R2K7C3A +3

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPD80R2K7C3AATMA1

Current - Continuous Drain (Id) @ 25°C	2 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	1.5 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	290 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	42 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs [Max]	2.7 Ohm
Supplier Device Package	TO-252AA (DPAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.9 V

IPD80R2 Series

Part	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Technology	Package / Case	Vgs (Max)	Grade	Qualification	Mounting Type	FET Type	Operating Temperature [Max]	Operating Temperature [Min]	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]
Infineon Technologies IPD80R2K7C3AATMA1	2.7 Ohm	42 W	2 A	MOSFET (Metal Oxide)	DPAK (2 Leads + Tab) SC-63 TO-252-3	20 V	Automotive	AEC-Q101	Surface Mount	N-Channel	150 °C	-40 °C	290 pF	10 V	TO-252AA (DPAK)	3.9 V	1.5 nC	800 V
Infineon Technologies IPD80R2K4P7ATMA1			2.5 A	MOSFET (Metal Oxide)	DPAK (2 Leads + Tab) SC-63 TO-252-3	20 V			Surface Mount	N-Channel	150 °C	-55 °C	150 pF	10 V	PG-TO252-3	3.5 V	7.5 nC	800 V	22 W	2.4 Ohm
Infineon Technologies IPD80R2K8CEATMA1		42 W	1.9 A	MOSFET (Metal Oxide)	DPAK (2 Leads + Tab) SC-63 TO-252-3	20 V			Surface Mount	N-Channel	150 °C	-55 °C	290 pF	10 V	PG-TO252-3	3.9 V		800 V		2.8 Ohm	12 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 2.17
		10	$ 1.39
		100	$ 0.94
		500	$ 0.75
		1000	$ 0.69
	Digi-Reel®	1	$ 2.17
		10	$ 1.39
		100	$ 0.94
		500	$ 0.75
		1000	$ 0.69
	Tape & Reel (TR)	2500	$ 0.61
Newark	Each (Supplied on Full Reel)	2500	$ 0.58

Description

General part information

IPD80R2 Series

The CoolMOS™ C3A technology was designed to meet the growing demands of higher system voltages in the area of electric vehicles, such as PHEVs and BEV.

Documents

Technical documentation and resources

IPD80R2K7C3AATMA1

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IPD80R2K7C3AATMA1

Deep-Dive with AI

Technical Specifications

IPD80R2 Series

Pricing

Description

IPD80R2 Series

Documents

Infineon-IPD80R2K7C3A-DS-v01_01-EN

IPD80R2K7C3A

MOSFET CoolMOS™ benefits in hard and soft switching SMPS topologies

Infineon-MA001096672-MaterialContentSheet-v01_00-EN

Datasheet

IPD80R2 Series