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IPD80R2K8CEATMA1 - TO252-3

IPD80R2K8CEATMA1

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Infineon Technologies

MOSFET, N-CH, 800V, 1.9A, TO-252

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IPD80R2K8CEATMA1 - TO252-3

IPD80R2K8CEATMA1

Active
Infineon Technologies

MOSFET, N-CH, 800V, 1.9A, TO-252

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIPD80R2K8CEATMA1
Current - Continuous Drain (Id) @ 25°C1.9 A
Drain to Source Voltage (Vdss)800 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]12 nC
Input Capacitance (Ciss) (Max) @ Vds290 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)42 W
Rds On (Max) @ Id, Vgs2.8 Ohm
Supplier Device PackagePG-TO252-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3.9 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.58
10$ 1.00
100$ 0.67
500$ 0.52
1000$ 0.48
Digi-Reel® 1$ 1.58
10$ 1.00
100$ 0.67
500$ 0.52
1000$ 0.48
Tape & Reel (TR) 2500$ 0.43
5000$ 0.40
7500$ 0.39
NewarkEach (Supplied on Cut Tape) 1$ 1.59
10$ 1.05
25$ 0.97
50$ 0.88
100$ 0.80
250$ 0.76
500$ 0.72
1000$ 0.66

Description

General part information

IPD80R2 Series

N-Channel 800 V 1.9A (Tc) 42W (Tc) Surface Mount PG-TO252-3

Documents

Technical documentation and resources