DMN2015UFDF-13
ActiveDiodes Inc
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Deep-Dive with AI
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DMN2015UFDF-13
ActiveDiodes Inc
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMN2015UFDF-13 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 15.2 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5 V, 1.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 42.3 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1439 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 6-UDFN Exposed Pad |
| Power Dissipation (Max) | 1.8 W |
| Rds On (Max) @ Id, Vgs | 9 mOhm |
| Supplier Device Package | U-DFN2020-6 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 12 V |
| Vgs(th) (Max) @ Id | 1.2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 10000 | $ 0.14 | |
| 20000 | $ 0.13 | |||
| 30000 | $ 0.12 | |||
Description
General part information
DMN2015UFDF Series
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Documents
Technical documentation and resources