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DMN2015UFDF-7 - DIODES INC. DMT12H065LFDF-13

DMN2015UFDF-7

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Diodes Inc

N-CHANNEL ENHANCEMENT MODE MOSFET 20V 15.2A 6-PIN U-DFN2020 T/R

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DMN2015UFDF-7 - DIODES INC. DMT12H065LFDF-13

DMN2015UFDF-7

Active
Diodes Inc

N-CHANNEL ENHANCEMENT MODE MOSFET 20V 15.2A 6-PIN U-DFN2020 T/R

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMN2015UFDF-7
Current - Continuous Drain (Id) @ 25°C15.2 A
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)4.5 V, 1.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs42.3 nC
Input Capacitance (Ciss) (Max) @ Vds1439 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case6-UDFN Exposed Pad
Power Dissipation (Max)1.8 W
Rds On (Max) @ Id, Vgs9 mOhm
Supplier Device PackageU-DFN2020-6
TechnologyMOSFET (Metal Oxide)
Vgs (Max)12 V
Vgs(th) (Max) @ Id1.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.68
10$ 0.43
100$ 0.27
500$ 0.21
1000$ 0.19
Digi-Reel® 1$ 0.68
10$ 0.43
100$ 0.27
500$ 0.21
1000$ 0.19
Tape & Reel (TR) 3000$ 0.14
6000$ 0.13
9000$ 0.13
15000$ 0.12
NewarkEach (Supplied on Cut Tape) 1$ 0.59
10$ 0.43
25$ 0.39
50$ 0.36
100$ 0.32
250$ 0.29
500$ 0.26
1000$ 0.25

Description

General part information

DMN2015UFDF Series

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.